savantic semiconductor product specification silicon npn power transistors 2SD1197 d escription with to-3pn package high dc current gain. large current capacity and wide aso. low saturation voltage darlington complement to type 2sb887 applications motor drivers, printer hammer drivers, relay drivers,voltage regulator control. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 110 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 10 a i cp collector current (pulse) 15 a p c collector power dissipation t c =25 70 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1197 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;r be = = 100 v v (br)cbo collector-base breakdown voltage i c =5ma ;i e =0 110 v v cesat collector-emitter saturation voltage i c =5a; i b =10ma 0.9 1.5 v v besat base-emitter saturation voltage i c =5a; i b =10ma 2.0 v i cbo collector cut-off current v cb =80v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 3.0 ma h fe dc current gain i c =5a ; v ce =3v 1500 4000 f t transition frequency i c =5a ; v ce =5v 20 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SD1197 package outline fig.2 outline dimensions
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